教育背景
2017.08--2022.09 美国纽约州立大学布法罗分校电子工程系 博士
2013-08--2016-07 北京大学物理学院 理学硕士
2008-09--2012-07 西北大学物理学院 理学学士
工作简历
2025-02~现在, 中国科学院微电子研究所, 副研究员（青年研究员）
2022-10~2024-10,美国加州大学伯克利分校电子工程系, 博士后研究员
课题组聚焦后摩尔时代新型器件，主要开展以下研究：1）后摩尔时代新型晶体管研究，结合仿真、工艺与实验，探索面向2 nm及以下节点的GAA、CFET、二维半导体晶体管的量子输运特性；2）低功耗自旋电子器件与存算一体芯片应用，面向存算一体、类脑计算和AI芯片发展低功耗非易失自旋电子硬件；3）光自旋电子学器件及光电芯片应用，面向片上光互联和量子信息接口探索自旋-光子界面与光电器件；4）AI for Chip，利用人工智能赋能半导体器件的快速仿真与建模。
抢占科技制高点项目 2024-06~2030-12 参与
1. He, K.*; Barut, B.; Yin, S.; Randle, M.; Dixit, R.; Arabchigavkani, N.; Nathawat, J.; Mahmood, A.; Echtenkamp, W.; Binek, C.; Dowben, P. A.; Bird, J. P.*, Graphene on Chromia: A system for Beyond-Room-Temperature Spintronics. Advanced Materials 2022, 34, (12), 2270097. (封面; 一作且通讯)
(封面链接: https://advanced.onlinelibrary.wiley.com/doi/10.1002/adma.202270097).
2. He, K.†; Bian, M.†; Seddon, S.†; Jagadish, K.; Mucchietto, A.; Ren, H.; Kirstein, E.; Asadi, R.; Bai, J.; Yao, C.; Pan, S.; Yu, J.; Milde, P.; Huai, C.; Hui, H.; Zang, J.; Sabirianov R.; Cheng X.; Miao, G.*; Xing, H.; Shao, Y.; Crooker, S.; Eng, L.; Hou, Y.*; Bird, J. P.; Zeng, H.*, Unconventional Anomalous Hall Effect Driven by Self-Intercalation in Covalent 2D Magnet Cr2Te3. Adv. Sci. 2025, 12(2), 2407625.
3. He, K.*; Vakili, H.; Barut, B.; Yin, S.; Randle, M. D.; Dixit, R.; Arabchigavkani, N.; Nathawat, J.; Mahmood, A.; Binek, C.; Dowben, P. A.; Kovalev, A. A.; Bird, J. P., Nonlocal Signatures of Spin Interference and Incipient Edge-State Formation in Graphene-on-Chromia Heterostructures. ACS Applied Materials & Interfaces 2025, 17 (38), 53901-53909. （一作且通讯）
4. He, K.; Peter A. Dowben; Bird, J. P., Emergent Spintronic Devices Integrating 2D Semiconductors with Functional Magnetic Materials, 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2023, Paestum, Italy.
5. He, K.; Vakili, H.; Mahmood, A.; Binek, C.; Dowben, P. A.; Kovalev, A. A.; Bird, J. P., Signatures of quantum spin interference in graphene-on-chromia heterostructures, SPIE Nanoscience + Engineering, 2025, San Diego, California, United States.
6. Chen, J. *; He, K.; Sun, C.; Wang, Y.; Li, H.; Gong, Q., Tuning Fano resonances with a nano-chamber of air. Opt. Lett. 2016, 41 (10), 2145-21.（导师一作）
7. Yin, S., He, K., Randle, M.; Barut, B.; Dixit, R.; Lipatov, A.; Sinitskii, A.; Bird, J. P.*, Probing the Dynamics of Electric Double-Layer Formation Over Wide Time Scales (10-9 – 10+5 s) in the Ionic Liquid DEME-TFSI. The Journal of Physical Chemistry C 2022, 126, (4), 1958-1965.
8. Yokoi, K., Somphonsane, R., Ramamoorthy, H., Arabchigavkani, N., He, K., Barut, B., Yin, S., Randle, M.D., Dixit, R., Nathawat, J. and Fransson, J., Mesoscopic Interference of Rotated Spins in Graphene Coupled to High-Spin–Orbit-Coupling Substrates. ACS Applied Materials & Interfaces, 2025, 17(44), 61050-61058.
9. Randle, M.; Lipatov, A.; Kumar, A.; Kwan, C.-P.; Nathawat, J.; Barut, B.; Yin, S.; He, K.; Arabchigavkani, N.; Dixit, R.; Komesu, T.; Avila, J.; Asensio, M. C.; Dowben, P. A.; Sinitskii, A.; Singisetti, U.; Bird, J. P.*, Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors. ACS Nano 2019, 13 (1), 803-811.
10. Barut, B.; Cantos, X.; Crabb, J.; Kwan, C.-P.; Dixit, R.; Arabchigavkani, N.; Yin, S.; Nathawat, J.; He, K.; Randle, M.; Vandrevala, F.; Sugaya, T.; Einarsson, E.; Jornet, J.; Bird, J. P.*; Aizin, G. *, Asymmetrically Engineered Nanoscale Transistors for On-Demand Sourcing of Terahertz Plasmons. Nano Lett. 2022, 22(7), 2674-2681.
11. Arabchigavkani, N.; Somphonsane, R.; Ramamoorthy, H.; He, G.; Nathawat, J.; Yin, S.; Barut, B.; He, K.; Randle, M. D.; Dixit, R.; Sakanashi, K.; Aoki, N.; Zhang, K.; Wang, L.; Mei, W. N.; Dowben, P. A.; Fransson, J.; Bird, J. P.*, Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene. Phys. Rev. Lett. 2021, 126 (8), 086802.
12. Nathawat, J.; Mansaray, I.; Sakanashi, K.; Wada, N.; Randle, M.; Yin, S.; He, K.; Arabchigavkani, N.; Dixit, R.; Barut, B.; Zhao, M.; Ramamoorthy, H.; Somphonsane, R.; Kim, G.; Watanabe, K.; Taniguchi, T.; Aoki, N.; Han, J.; Bird, J. P.*, Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene. Nature Communication 2023, 14(1), 1507.
13. Bian, M. †; Kamenskii, A. N. †; Han, M. †; Li, W.; Wei, S.; Tian, X.; Eason, D. B.; Sun, F.; He, K.; Hui, H.; Yao, F.; Sabirianov, R.; Bird, J. P.; Yang, C.; Miao, J.; Lin, J.*; Crooker, S. A.*; Hou, Y.*; Zeng, H.*, Covalent 2D Cr2Te3 ferromagnet. Materials Research Letters 2021, 9 (5), 205-212.
14. Dixit, R.; Barut, B.; Yin, S.; Nathawat, J.; Randle, M.; Arabchigavkani, N.; He, K.; Kwan, C. P.; Mishima, T. D.; Santos, M. B.; Ferry, D. K.; Sellers, I. R.; Bird, J. P.*, Pulsed studies of intervalley transfer in Al0.35In0.65As: A paradigm for valley photovoltaics. Phys. Rev. Mater. 2020, 4 (8), 085404.
15. Nathawat, J.; Smithe, K. K. H.; English, C. D.; Yin, S.; Dixit, R.; Randle, M.; Arabchigavkani, N.; Barut, B.; He, K.; Pop, E.; Bird, J. P.*, Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer MoS2. Phys. Rev. Mater. 2020, 4 (1), 014002.
16. Kwan, C. P.; Street, M.; Mahmood, A.; Echtenkamp, W.; Randle, M.; He, K.; Nathawat, J.; Arabchigavkani, N.; Barut, B.; Yin, S.; Dixit, R.; Singisetti, U.; Binek, C.; Bird, J. P.*, Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates. Aip. Adv. 2019, 9 (5), 055018.
17. Yin, S.; Gluschke, J. G.; Micolich, A. P.; Nathawat, J.; Barut, B.; Dixit, R.; Arabchigavkani, N.; He, K.; Randle, M.; Kwan, C.-P.; Bird, J. P.*, Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors. ACS Applied Electronic Materials 2019, 1 (11), 2260-2267.
18. Yin, S., He, K., Barut, B., Randle, M.D., Dixit, R., Nathawat, J., Adinehloo, D., Perebeinos, V., Han, J.E. and Bird, J.P., Real‐Time Observation of Slowed Charge Density Wave Dynamics in Thinned 1T‐TaS2. 2024, Advanced Physics Research, 3(9), p.2400033.
1：一种电控磁性光子晶体结构和拓扑光子芯片；受理；中国；202511367101.7；第一发明人 (2025)
2：一种磁电自旋晶体管及其制造方法、电子设备; 受理；中国；202511995332.2；第一发明人 (2025)
3: 一种磁电自旋晶体管及其制造方法，电子设备; 受理；中国；202511615054.3；第一发明人 (2025)
1. 国际顶级会议TECHCON 2020会议最佳学生演讲者（10/160）
2.全国大学生数学竞赛一等奖（2010）
人才队伍