先进逻辑CMOS器件工艺及集成，高k/金属栅，多阈值技术

[1]. Y. Yu, J. Yao, L. Cao, Y. Wang, Y. Wei, J. Xu, Z. Wang, H. Zhang, Y. Hu, Q. Zhang, X. Wang, J. Luo, H. Yin, Fabricated Parasitic-Interbridge-Free TreeFETs for CMOS Low Power Applications，IEEE Electron Device Letters，2026，通讯作者

[2]. Y. Wang, J. Yao, Y. Wei, Q. Zhang, F. Wang, S. Liu, L. Cao, Y. Yu, W. Xiong, S. Yang, J. Li, H. Yin, X. Wang, J. Luo, LaOx Atomic Flip Dipole Technique with Single Dipole Shifter in CMOS GAA NSFETs，IEEE Transactions on Electron Devices，2026，通讯作者

[3]. Y. Wang, J. Yao, Y. Wei, Q. Zhang, H. Yin, Experiment Investigation of La2O3 Dipole-Last Cap-Less VFB Tuning Technology With Low-Thermal Post Deposition Anneal，IEEE Journal of the Electron Devices Society，2026，通讯作者

[4]. Y. Wang, J. Yao, Y. Wei, Q. Zhang, F. Wang, S. Liu, L. Cao, Y. Yu, W. Xiong, S. Yang, J. Li, H. Yin, X. Wang, J. Luo, First Demonstration of LaOx Atomic Flip Dipole Technique with Single Dipole Shifter in CMOS GAA NSFETs to Achieve ~66 mV/level Multi-VTs within 330 mV Range，International Electron Devices Meeting (IEDM)，2025，通讯作者，Top ranked student paper

[5]. Y. Wei, J. Yao, Y. Wang, Q. Zhang, S. Yang, L. Cao, Q. Li, X. Zhang, Y. Zhang, H. Yang, J. li, Li, H. Yin, X. Wang, J. Luo, First Demonstration of 9N+9P Complete Dipole Multi-V_Ts CMOS Integration with Atomic Interfacial Dipole Buffer Layer Technique in GAA NSFETs，Symposium on VLSI Technology and Circuits，2025，通讯作者

[6]. Y. Wei, J. Yao, Y. Wang, Q. Zhang, J. Gao, X. Wang, J. Luo, H. Yin, Linear Fine-tuning V_FB and Improved Interface via Novel Al₂O₃ Atomic in-situ Dipole Buffer Layer (DBL) in ALD La₂O₃ Dipole-first Stack, IEEE Electron Device Letters，2025，通讯作者

[7]. Y. Wang, J. Yao, Y. Wei, Q. Zhang, N. You, S. Yang, H. Yin, Investigation of TiN/LaOx Interface Dipole Effect on Negative Flat-Band Voltage (VFB) Shift in TiN/LaOx/HfO2/SiO2 Gate Stacks Using Dipole-Last Technology，IEEE Transactions on Electron Devices，2025，通讯作者

[8]. X. Zhang, Q. Li, L. Cao, Q. Zhang, R. jiang, P. Wang, J. Yao, H. Yin, Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering，IEEE Journal of the Electron Devices Society，2025，通讯作者

[9]. Y. Wei, J. Yao, Q. Zhang, G. Sang, Y. Bao, J. Gao, J. Li, J, Luo, H. Yin, Sub-5-Å La₂O₃ In Situ Dipole Technique for Large V_FB Modulation With EOT Reduction and Improved Interface for HKMG Technology，IEEE Transactions on Electron Devices，2024，通讯作者

J. Yao, Y. Wei, S. Yang, H. Yang, G. Xu, Y. Zhang, L. Cao, X. Zhang, Q. Liu, Z. Wu, H. Yin, Q. Zhang, J. Li, J. Luo, Record 7(N)+7(P) Multiple V_Ts Demonstration on GAA Si Nanosheet n/pFETs using WFM-Less Direct Interfacial La/Al-Dipole Technique，International Electron Devices Meeting (IEDM)，2022，第1作者