教育背景

2009-09 至 2013-06，石家庄学院，物理学，学士

2013-09 至 2016-06，上海大学，凝聚态物理，硕士

2016-09 至 2019-06，上海大学，凝聚态物理，博士

工作简历

2020-04 至 2024-03，新加坡国立大学，博士后

2024-04 至今，中国科学院微电子研究所，副研究员

[1] Chaoni Zhan, Ming Gao (通讯作者), Yinghao Li, Zhen Huang, Zhikun Qiu, Haoyu Wang, Song Liu, Jun Luo, Contact-First Integration toward Pristine Metal-MoS₂ Interfaces, Applied Materials & Interfaces, 2026, 18, 25540-25547.

[2] Zhiyong Wang, Ming Gao(共同一作), Wei Wei, Yung C. Liang, Chunxiang Zhu,Ultrasensitive and Reliable Extended-Gate Field-Effect Transistors for Ions Detection with a Dual-Gate Structure, IEEE Sensors Letters, 2025, 9, 3503104.

[3] Wei Wei, Ming Gao (通讯作者), Zhiyong Wang, Chunxiang Zhu, Performance Enhancement of Solution-Processed CuI P-Channel Thin-Film Transistor by HBr Gas Treatment Method, IEEE Electron Device Letters, 2024, 45(10), 1752-1755.

[4] Ming Gao, Wei Wei, Zhiyong Wang, Zhi Gen Yu, Yong-Wei Zhang, Chunxiang Zhu, Enhanced Performance of P-Channel CuIBr Thin-Film Transistor by ITO Surface Charge-Transfer Doping, ACS Applied Materials & Interfaces, 2024, 16 (31), 41176-41184.

[5] Wei Wei, Ming Gao (共同一作), Zhiyong Wang, Yong-Wei Zhang, Zhi Gen Yu, Wai Kin Chim, Chunxiang Zhu, High-performance p-channel CuIBr thin-film transistor synthesized from solution in the atmosphere, Applied Physics Letters, 2023, 122, 193301.

[6] Ming Gao, Wei Wei, Tao Han, Bochang Li, Zhe Zeng, Li Luo, Chunxiang Zhu, Defect engineering in thickness-controlled Bi₂O₂Se-based transistors by argon plasma treatment, ACS Applied Materials & Interfaces, 2022, 14, 15370-15380.

[7] Ming Gao, Dongyun Chen, Kangjing Wu, Fanying Meng and Zhongquan Ma, The hole transport mechanism of MoO_x/a-Si: H/n-Si solar cell: source of “S” sharp behavior, Journal of Physics D: Applied Physics, 2020, 53(42), 425302.

[8] Ming Gao, Dongyun Chen, Baichao Han, Wenlei Song, Miao Zhou, Xiaomin Song, Fei Xu, Yonghua Li, Lei Zhao and Zhongquan Ma, Bifunctional hybrid a-SiO_x(Mo) layer for hole-selective and interface passivation of highly efficient MoO_x/a-SiO_x(Mo)/n-Si heterojunction photovoltaic device, ACS Applied Materials & Interfaces, 2018, 10, 27454.

[9] Ming Gao, Yazhou Wan, Yong Li, Baichao Han, Wenlei Song, Fei Xu, Lei Zhao and Zhongquan Ma, Effective passivation and tunneling hybrid a-SiO_x(In) layer in ITO/n-Si heterojunction photovoltaic device, ACS Applied Materials & Interfaces, 2017, 9, 17565.

[10] Ming Gao, Huiwei Du, Jie Yang, Lei Zhao, Jing Xu and Zhongquan Ma, Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO_x/Si system, Chinese Physics B, 2017, 26(4), 045201.

 1.高明, 罗军, 刘颂, 许静, 邱志坤, 半导体器件及其制造方法, 申请号：202510571829.5

 2.马忠权，高明，陈东运，韩百超，赵磊，空穴选择型MoO_x/SiO_x(Mo)/n-Si异质结、太阳电池器件及其制备方法, 专利号：ZL 201810557220.2

2019届上海大学研究生优秀毕业生；

2017-2018学年“博士研究生国家奖学金”；

2016-2017学年“博士研究生国家奖学金”；

2016年《第十二届中国太阳级硅及光伏发电研讨会》优秀论文奖；

2013届“河北省普通高校优秀毕业生”；

2010-2011学年“国家奖学金”。