2009年2月，制作完成一台内径350毫米的二氧化碳超临界流体工艺平台，该平台能进行清洗，HPCVD，高速无等离子体刻蚀和硅片三维加工和纳米管内部镀膜技术,是一台多功能创新型技术设备。

参加国家863重大专项，危化品检测与跟踪网络化系统集成及产业化应用技术。传感器电学参数测试子课题负责人。参与863国家重大专项（01、02），32nm以下设备关键技术研究及创新设备技术探索，二氧化碳超临界流体半导体清洗技术负责人。

1. Quantitative Analysis and Influence of CO2 Absorbed in TMAH solution for Silicon Etching
Yupeng Jing, Kazusuke Maenaka, Hiroshi Nishioka, Sunao Ioku, Takayuki Fujita and Yoichiro Takayama.
Pp79-84, IEEJ, Sensor micromachine volume 123, March 2003

2. Anisotropic Etching on Si (110) Plane Using Iodine Added KOH Solution, Yupeng Jing, Kazusuke Maenaka, Takayuki Fujita and Yoichiro Takayama, Proceedings of the 20th Sensor Symposium on Sensors, Micromachines and Applied systems, 2003

3. Y. Jing, K. Maenaka, H. Nishioka, S. Ioku, T. Fujita and Y. Takayama，“Monitoring Methods for TMAH Deterioration in Etching Characteristics”,Pacific Rim Workshop on Transducer and Micro/Nano Technologies, Xiamen, China, MN-15, pp．83-86, July, 2002．

4．Yupeng Jing, Kazusuke Maenaka, Takayuki Fujita, Yoichiro Takayama“Anisotropy of Silicon Etching in Neutralized TMAH”, 3rd Workshop on Physical Chemistry of Wet Etching of Silicon, Nara, Japan, pp.62-65, June, 2002

5. Gao Chaoqun, Jiao Binbin, Liu Maozhe, Li Quanbao, Yangkai, Shi Shali, Li Zhigang, Ou Yi, Jing Yupeng, Chen Dapeng, “MEMS/CMOS Compatibil Gas Sensors Based on Spectroscopy Analysis” JOURNAL OF SEMICONDUCTORS (半导体学报)，Vol.29 No.10,.pp.142-148. Oct.,2008