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  • 姓名: 卢年端
  • 性别: 男
  • 职称: 研究员
  • 职务: 
  • 学历: 博士
  • 电话: 010-82995582
  • 传真: 010-82995583
  • 电子邮件: lunianduan@ime.ac.cn
  • 所属部门: 微电子器件与集成技术重点实验室
  • 通讯地址: 北京市朝阳区北土城西路3号

    简  历:

  • 教育背景

    2006.09-2010.07,北京工业大学材料科学与工程学院,博士。

    2004.09-2006.07,北京工业大学材料科学与工程学院,硕士。

    1998.09-2002.07,内蒙古科技大学材料系,本科。

    工作简历

    2013.10-至今,中国科学院微电子研究所纳米加工与新器件集成技术实验室,副研究员。

    2012.8-2013.10,中国科学院微电子研究所纳米加工与新器件集成技术实验室,助理研究员

    2010.10-2012.08,清华大学材料系,博士后。

    2002.07-2004.09,武汉钢铁集团公司,助理工程师。

    社会任职:

  • IEEE Member;

    2015中国(国际)功能材料科技与产业高层论坛,组织委员会委员

    研究方向:

  • 半导体器件物理,热电材料,有机太阳能电池,新型非挥发存储技术,第一性原理计算

    承担科研项目情况:

  • 1. 主持国家自然科学基金面上项目,“阻变存储器三维集成中的器件模型”, 2016年1月至2019年12月,批准号:61574166。

    2. 主持国家自然科学基金青年基金项目,基于跃迁理论的阻变存储器载流子输运特性的研究”,2014年1月至2016年12月,批准号: 61306117。

    3. 主持中国工程物理研究院微系统与太赫兹科学技术基金,“HfOx RRAM中材料优化设计的第一性原理研究”,2016年1月至2017年12月,批准号:CAEPMT201504.。

    4. 参与863项目“高速低功耗的阻变存储器材料与器件关键技术”,2014年1月至2016年12月。

    国际大会报告:

    1. Nianduan Lu, Pengxiao Sun, Ling Li, Ming Liu, Yingtao Li, Su Liu, “Simulaiton of thermal crosstalk of resistive switching memory in three-dimensional crossbar structure”, SISPAD 2015, September 9-11, 2015, Washington, DC, USA. pp 438-441. (国际会议)

    2. Nianduan Lu, Ling Li, Pengxiao Sun, Ming Wang, Qi Liu, Hangbing Lv, Shibing Long, and Ming Liu, “A novel approach to identify the carrier transport path and its correlation to the current variation in RRAM”, International Memory Workshop (IMW), Moterey CA, USA, 2015.5.17-20.(国际会议)

    3. Nianduan Lu, “Carrier thermoelectric transport in organic semiconductor based on hopping theory”, 2015 EMN Qingdao Meeting, Qingdao, China, 2015.6.14-17.(做大会邀请报告)

    4. Nianduan Lu, “Physical Model of Thermopower in Organic Thin-film Transistor”, The 6th International Conference on Computer Aided Design for Thin-Film Transistors, Nanjing , 15-17 October, 2014. (做分会报告)

    代表论著:

  • 1. Nanduan Lu, Ling Li, Writam Banerjee, and Ming Liu, “Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors”, Organic Electronics, 29: 27-32 (2016).

    2. Nianduan Lu, Ling Li, and Ming Liu, “Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors”, Phys. Rev. B, 91: 195205 (2015).

    3. Nianduan Lu, Pengxiao Sun Ling Li, Yingtao Li, Hong Wang, Hangbing Lv, Qi Liu, Shibing Long, Su Liu, and Ming Liu, “Thermal crosstalk in 3-dimensional RRAM crossbar arrays”, Scientific Reports, 5:13504(2015).

    4. Nianduan Lu, Ling Li, Writam Banerjee, Pengxiao Sun, Nan Gao, and Ming Liu, “Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors”, Journal of Applied Physics, 118:045701 (2015).

    5. Nianduan Lu, Ling Li, Pengxiao Sun, Ming Wang, Qi Liu, Hangbing Lv, Shibing Long, Writam Banerjee, and Ming Liu, “Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory”, Material Research Express, 2: 046304 (2015).

    6. Nianduan Lu, Ling Li, and Ming Liu, “Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors”, Organic Electronics, 16:113-117 (2015).

    7. Nianduan Lu, Ling Li, Pengxiao Sun, Ming Wang, Qi Liu, Hangbing Lv, Shibing Long, and Ming Liu, “A novel method of identifying carrier transport path in metal oxide resistive random access memory”, Journal of Physics D: Applied Physics, 48: 065101 (2015).

    8. Nianduan Lu, Guangwei Xu, Wei Wang, Ling Li, Nag Gao, Zhuoyu Ji, Ling Li, and Ming Liu, “Univeral description of exciton diffusion length in organic photovoltaic cell”, Organic Electronics, 23: 53-56 (2015).

    9. Nianduan Lu, Long Wang, Ling Li, Zhuoyu Ji, Writam Banerjee, and Ming Liu, “Compact model for organic thin-film transistor with Gaussian density of states”, AIP Advances, 5: 047123 (2015).

    10. Nianduan Lu, Jiebin Niu, Ling Li, and Ming Liu, “Polaron effect dependence of thermopower in organic semiconductors”, Physics Letters A, 378:3579-3581 (2014).

    11. Nianduan Lu, Ling Li, and Ming Liu, “Short-circuit current model of organic solar cells”, Chemical Physics Letters, 614:27-30 (2014).

    12. Nianduan Lu, Ling Li, Pengxiag Sun, Writam Banerjee, and Ming Liu, “A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin film transistors”, Journal of Applied Physics, 116:104502 (2014).

    13. Nianduan Lu, Ling Li, and Ming Liu, “Temperature dependent magnetic properties of Co-P films”, Advanced Materials Research, 952: 7 (2014).

    14. Nianduan Lu, Ling Li, Pengxiao sun, and Ming Liu, “Charge carrier relaxation model in disordered organic semiconductors”, AIP Advances, 3:112119 (2013).

    15. Nianduan Lu, Donghua yang, and Liangliang Li, “Interfacial reaction between Sn-Ag-Cu solder and Co-P films with various microstructures”, Acta Materialia, 61: 4581 (2013).

    16. Nianduan Lu, J. Cai, L. L. Li. Dependence of interfacial adhesion of Co-P film on its microstructure. Surface & Coatings Technology. 2012, 206: 4822-4827.

    17. Nianduan Lu, Y. Q. Li, J. Cai, L. L. Li, Synthesis and Characterization of Ultrasonic-Assisted Electroplated Co–P Films With Amorphous and Nanocrystalline Structures. IEEE Trans. Magn. 2011, 47: 2158074-4.

    18. Nianduan Lu, X. Y. Song, J. X. Zhang. Crystal Structure and Magnetic Properties of Ultrafine Nanocrystalline SmCo3 Compound. Nanotechnology. 2010, 21:115708-7.

    19. Nianduan Lu, X. Y. Song, X. M. Liu, J. X. Zhang. Preparation and Magnetic Properties of Amorphous and Nanocrystalline Sm2Co17 alloys. Intermetallics. 2010, 18:1180-1184.

    20. Nianduan Lu, X. Y. Song, M. Seyring, M. Rettenmayr, J. X. Zhang. Preparation and Properties Characterization of the Single-phased Sm2Co17 Nanocrystalline Alloy. Journal of Nanoscience and Nanotechnology. 2009, 9:5141-5144.

    21. Nianduan Lu, X. Y. Song, J. X. Zhang. Microstructure and Fundamental Properties of Nanostructured Gadolinium (Gd). Materials Letters. 2009, 63:1089-1092.

    22. Nianduan Lu, X. Y. Song, J. X. Zhang, X. M. Liu, G. Z. Zhang. Structure and Properties of Nanocrystalline Rare Earth Bulks Prepared by Spark Plasma Sintering. Journal of Rare Earths. 2009, 27(6):961-966.

    23. Nianduan Lu, X. Y. Song, J. X. Zhang, X. Q. Yan, M. Rettenmayr. Preparation and Characterization of Dysprosium (Dy) Ultrafine Nanocrystalline Structures. Journal of Nanoscience and Nanotechnology. 2008, 8(2):961-966.

    24. Keke Zhang, Nianduan Lu#, Ling Li, and Ming Liu, “Resistance-switching mechanism of SiO2:Pt-based Mott memory”, J. Appl. Phys. 118 : 245701 (2015). (#通讯作者)

    25. Lingfei Wang, Wei Wang, Guangwei Xu, Zhuoyu Ji, Nianduan Lu #, Ling Li, and Ming Liu, “Analytical carrier density and quantum capacitance for graphene”, Appl. Phys. Lett. 108, 013503 (2016). (#通讯作者)

    26. Ling Li, Nianduan Lu, Ming Liu and Heinz B?ssler, “General Einstein relation model in disordered organic semiconductors under quasiequilibrium”, Phys. Rev. B, 90: 214107 (2014).

    27. Ling Li, Nianduan Lu, and Ming Liu, “Physical origin of nonlinear transport in organic semiconductor at high carrier densities”, Journal of Applied Physics, 116:164504 (2014).

    28. Ling Li, Nianduan Lu, and Ming Liu, “Limitation of the concept of transport energy in disordered organic semiconductors”, Europhysics letters, 106:17005 (2014).

    29. Ling Li, Nianduan Lu, and Ming Liu, “Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors with Arbitrary Energy Distribution of Traps”, IEEE Electron Device Letters, 35(2):226-228 (2014).

    30. Ling Li, Nianduan Lu, and Ming Liu, “Effect of dipole layer on the density-of-states and charge transport in organic thin film transistors”, Appl. Phys. Lett., 103:253303 (2013).

    31. Ling Li, Nianduan Lu, and Ming Liu, “Influence of mobility on the dissociation probability of electron-hole pair in hopping system”, Appl. Phys. Lett., 101:043302 (2012).

    32. X. Y. Song, Nianduan Lu, X. M. Liu, Q. M. Lu, L. X. Sun. M. Rettenmayr, F. X. Yin, J. X. Zhang, M. L. Zhou. Preparation and Characterization of Nano Rare Earths. New Journal of Physics. 2008, 10:023024-023038.

    33. X. Y. Song, Nianduan Lu, M. Seyring, M. Rettenmayr, W. W. Xu, Z. X. Zhang, J. X. Zhang. Abnormal Crystal Structure Stability of Nanocrystalline Sm2Co17 Permanent Magnet. Applied Physics Letters. 2009, 94(2):023102-023105.

    34. X. Y. Song, Nianduan Lu, W. W. Xu, Z. X. Zhang, J. X. Zhang. Phase Transformation in Nanocrystalline Sm2Co17 Permanent Magnet. Journal of Applied Crystallography. 2009, 42:691-696.

    35. Ling Li, Nan Gao, Nianduan Lu, Ming Liu and Bassler, “Spin diffusion in disordered organic semiconductors”, Phys. Rev. B, 92, 214438 (2015).

    36. Lingfei Wang, Ling Li, Nianduan Lu, Zhuoyu Ji, Wei Wang, Zhiwei Zong, Guangwei Xu, and Ming Liu, “An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors”, IEEE Electron Device Letters, 36,1351 (2015).

    37. Zhiwei Zong, Ling Li, Jin Jang, Nianduan Lu, and Ming Liu, “Analytical surface-potential compact model for amorphous-IGZO thin-film transistors”, Journal of Applied Physics, 117: 215705 (2015).

    38. Pengxiao Sun, Ling Li, Nianduan, Hangbing Lv, Ming Liu, and Su Liu, “Physical model for electroforming process in valence change”, J. Comput. Electron., 14: 146-150 (2015).

    39. Pengxiao Sun, Ling Li, Nianduan Lu, Yingtao Li, Ming Wang, Hongwei Xie, Su Liu, and Ming Liu, “Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory”, J. Comput. Electron., 13: 432-438 (2014).

    40. Wei Wang, Ling Li, Zhuoyu Ji, Tianchun Ye, Nianduan Lu, Zhigang Li, Dongmei Li, and Ming Liu, “Modified Transmission Line Model for Bottom-Contact Organic Transistors”, IEEE Electron Device Letters, 34(10):1301 (2013).

    41. Ming Wang, Chong Bi, Ling Li, Shibing Long, Qi Liu, Hangbing Lv, Nianduan Lu, Pengxiao Sun, and Ming Liu, “Thermoelectric Seebeck effect in oxide-based resistive switching memory”, Nat. Comm., 5:4598 (2014).

    42. Zhiwei Zong, Ling Li, Jin Jang, Zhigang Li, Nianduan Lu, Liwei Shang, Zhuoyu Ji, and Ming Liu, “A new surface potential-based compact model for a-IGZO TFTs in RFID applications”, IEDM Tech. Dig., 35.5: (2014).

    43. Lingfei Wang, Songan Peng, Zhiwei Zong, Ling Li, Wei Wang, Guangwei Xu, Nianduan Lu, Zhuoyu Ji, and Ming Liu, “A New Surface Potential Based Physical Compact Model for GFET in RF Applications”, IEDM Tech. Dig., 28.4: (2015).

    44. Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Jianfeng Gao, Nianduan Lu, Steve S. Chung, Jing Li, and Ming Liu, “Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells”, IEDM Tech. Dig., 10.2: (2015).

    45. Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Nianduan Lu, Ming Liu, “Cu BEOL Compatible Selector with High Selectivity (>107), Extremely Low Off-current (~pA) and High Endurance (>1010)”, IEDM Tech. Dig., 10.4: (2015).

    46. Wenwu Xu, Xiaoyan Song, Nianduan Lu, Chuan Huang, “Thermodynamic and experimental study on phase stability in nanocrystalline alloys”, Acta Materialia, 58: 396-407 (2010).

    47. Wenwu Xu, Xiaoyan Yan, Nianduan Lu, Martin Seyrng, M. Rettenmayr, “Nanoscale thermodynamic study on phase transformation in the nanocrystalline Sm2Co17 alloy”, Nanoscale, 1(2): 238-44 (2009).

    48. Zhexu Zhang, Xiaoyan Song, Wenwu Xu, Nianduan Lu, “Phase constitution, evolution and correlation with magnetic performance in nominal SmCo9.8 alloy”, Journal of Alloys and Compounds, 539: 108-115 (2012).

    专利申请:

  • 1. 卢年端,孙鹏霄,李泠,刘明,刘琦,龙世兵,吕杭炳, “三维集成阻变存储器的热效应评估及降低热串扰的方法”,专利号:201510983042.6

    2. 卢年端,孙鹏霄,李泠,刘明,刘琦,吕杭炳,龙世兵,“改善三维集成阻变存储器耐久性的法”,专利号:201511019965.6

    3. 卢年端,李泠,刘明,“测量半导体材料无序度的方法”,专利号:201510227994.5

    4. 卢年端,李泠,刘明,“测量有机半导体状态密度的方法”,专利号:201510228253.9

    5. 卢年端,李泠,刘明,高南,徐光伟,王伟,“赛贝克系数测量结构、测量结构制备方法及测量方法”,专利号:201510226906.X

    6. 卢年端,李泠,刘明,孙鹏霄,王明,李颖涛,“一种提取金属氧化物基阻变存储器载流子输运通道的方法”,专利号:201410541573.5

    7. 卢年端,李泠,刘明,孙鹏霄,王明,李颖涛,“一种提取阻变存储器激活能的方法”,专利号:201410144275.2

    8. 卢年端,李泠,刘明,闫小兵,吕杭炳,孙鹏霄,“一种测量阻变存储器状态密度的方法”,专利号:201410270200.9

    9. 卢年端,李泠,刘明,孙鹏霄,王明, “一种分析阻变存储器电流波动性的方法”,专利号:201410411901.X

    10. 卢年端,李泠,刘明,孙鹏霄,刘琦,“一种表征有机半导体器件驰豫现象的方法”,专利号:201410283265.7

    11. 卢年端,李亮亮,蔡坚,李燕秋,“Co-P薄膜的制备方法”,专利号:201110092400.6

    获奖及荣誉:

  • 2010年度获北京工业大学校级优秀博士论文