教育背景 

工作简历 

1.国家自然基金青年基金项目，《累积损伤对SOI工艺集成电路电磁兼容性的影响》，项目负责人

2.基金项目，项目负责人

3.科技部留学人员回国资助基金《SOI工艺器件的热载流子损伤》，项目负责人

4.基金项目，《电子系统电磁辐射抑制》，项目负责人

5.基金项目，《基于SOI工艺电路电磁兼容性》，项目负责人

1. Yang Huang, Binhong Li, Xing Zhao, Zhongshan Zheng, Jiantou Gao, Gang Zhang, Bo Li,Guohe Zhang, Kai Tang, Zhengsheng Han , Jiajun Luo, “An Effective Method to Compensate Total Ionizing Dose Induced Degradation on Double-SOI Structure,” Trans. on Nuclear Science (TNS), 2018. 

2. Y. Xu, H. Sun, B. Li* et al. “Essential effects on the mobility extraction reliability for organic transistors”, Advanced Functional Materials, Vol. 28, No. 42, 2018 

3. B. Li, A. Boyer, S. Ben Dhia, C. Lemoine,“Ageing effect on electromagnetic susceptibility of a phase locked loop”, Microelectronic Reliability, Vol. 50, Issues 9-11, September – November 2010, pp. 1304-1308. 

4.  B. Li, N. Berbel, A. Boyer, S. Ben Dhia, R. Fernández Garcíab, “Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences”, Microelectronic Reliability. Vol. 51, Issues 9-11, pp. 1557-1560. September 2011. 

5. A. Boyer, S. Ben Dhia, B. Li, N. Berbel, R. Fernández Garcíab, “Experimental Investigations on electrical Stress Impact on Integrated Circuit Electromagnetic Compatibility” IEEE Transaction on Electromagnetic Compatibility, Vol. PP, No. 99, February 2013. 

6.  B. Li, K. Zhao, J. Wu, X. Zhao, J. Su, J. Gao, C. Gao, J. Luo, “Electromagnetic susceptibility characterization of double SOI device”, Microelectronics Reliability, Volume 64, September 2016, Pages 168–171. 

7. J. Wu, C. Li, B. Li*, W. Zhu, H. Wang, “Microcontroller susceptibility variations to EFT burst during accelerated aging” Microelectronics Reliability, Volume 64, September 2016, Pages 210–214.